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	GATE 1990 ECE Effect of Temprature on BJT and MOSFET (GATE Paper Satish Bojjawar) View
	Gate 1990 Electronics (ECE) Solution \| Thermal runaway \| MOSFET current \| BJT current \| EDC \| (Success Point for GATE) View
	Problem on effect of Temperature - GATE 1990 ECE (Electron Devices) - (www.egate.ws) (Raghu Nandan) View
	Problem on MOSFET - GATE 1991 ECE (Electronic Devices) - (www.egate.ws) (Raghu Nandan) View
	Problem on MOSFET Operating Region - GATE 2009 ECE (Electron Devices) - www.egate.ws (Raghu Nandan) View
	GATE 1994 ECE Threshold voltage of n channel MOSFET can be increased by (GATE Paper Satish Bojjawar) View
	GATE 1996 ECE In BJT if emitter current is doubled, the voltage across the junction (GATE Paper Satish Bojjawar) View
	Problem on MOSFET - GATE 2005 ECE (Two Mark) (Electron Devices) - (www.egate.ws) (Raghu Nandan) View
	Problem on BJT (Transistors) - GATE 2005 ECE (Two Mark) (Electron Devices) - (www.egate.ws) (Raghu Nandan) View
	Problem on Diode (PN Junction) GATE 1990 ECE (Electron Devices) - (www.egate.ws) (Raghu Nandan) View