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	The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon- n ju... (PW Solutions) View
	The dominant mechanisms for motion of charge carriers in the forward and reverse biased silicon ... (PW Solutions) View
	The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon p-n j... (PW Solutions) View
	The breakdown in a reverse biased p-n junction diode is more likely to occur due to \| 12 \| SEMI... (Doubtnut) View
$Download Lagu A semiconductor $ X $ is made by doping a germanium crystal with arsenic $ (Z=33) $. A secon...$	A semiconductor $ X $ is made by doping a germanium crystal with arsenic $ (Z=33) $. A secon... (PW Solutions) View
	Potential barrier developed in a junction diode opposes- (1) Minority carriers in both regions on... (PW Solutions) View
	In which of the following figure the junction diode is reverse biased \| 12 \| SEMICONDUCTORS \| ... (Doubtnut) View
	In semiconductor the concentrations of electrons and holes are 8 × 10^18 / m^3 and 5 × 10^18 / m ... (PW Solutions) View
	The circuit shown in the figure contains two diodes each with a forward resistance of 50 ohm and ... (PW Solutions) View
	In the depletion region of a diode P (a) there are no mobile charge... (PW Solutions) View